MMST5551 is a NPN small signal surface mount transistor from ON Semiconductor. It is suitable for medium power amplification and switching applications. The transistor features Epitaxial Planar Die construction, high integration, low power consumption, and SOT-323 package.
This document provides technical specifications for the MMST5551, an epitaxial planar die construction NPN small signal surface mount transistor. It is designed for medium power amplification and switching applications.
The datasheet details maximum ratings such as a collector-base voltage of 180V and continuous collector current of 200mA. It also lists electrical characteristics including DC current gain, saturation voltages, and frequency response parameters.
| Collector-Base Voltage (Vcbo) | 180 V |
|---|---|
| Collector-Emitter Voltage (Vceo) | 160 V |
| Emitter-Base Voltage (Vebo) | 6.0 V |
| Operating and Storage Temperature Range | -55 to +150 °C |
The maximum continuous collector current is 200 mA.
The maximum power dissipation is 200 mW.
The unit operates and stores within a range of -55 to +150 °C.