This document describes the features and characteristics of the DS30165 Rev. B-1 1 of 1 MMSTA13/MMSTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR, including epitaxial planar die construction, complementary PNP type availability, medium power amplification and switching capability, high current gain, and ultra-small surface mount package.
This document is a datasheet for the MMSTA13 and MMSTA14 NPN surface mount Darlington transistors manufactured by Diodes Incorporated. The devices feature an epitaxial planar die construction and are available in a complementary PNP type (MMSTA63/MMSTAG64). They are designed for medium power amplification and switching applications, utilizing an ultra-small SOT-323 molded plastic package.
| Collector-Base Voltage | 30 V |
|---|---|
| Collector-Emitter Voltage | 30 V |
| Emitter-Base Voltage | 10 V |
| Collector Current - Continuous | 300 mA |
| Power Dissipation | 200 mW |
| Thermal Resistance, Junction to Ambient | 625 K/W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| DC Current Gain (MMSTA13) | 5,000 |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Base-Emitter Saturation Voltage | 2.0 V |
| Output Capacitance | 8.0 pF |
| Input Capacitance | 15 pF |
| Current Gain-Bandwidth Product | 125 MHz |
The maximum continuous collector current is 300 mA.
The maximum power dissipation is 200 mW.
The devices operate and store between -55°C and +150°C.