2N7002-01 is a N-channel enhancement mode field effect transistor with low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed and low input/output leakage.
This document is a technical datasheet for the Diodes Incorporated 2N7002-01, an N-channel enhancement mode field effect transistor. The device features a low on-resistance in the SOT-23 package with a low gate threshold voltage and fast switching speed.
The datasheet provides detailed electrical characteristics including maximum ratings such as a drain-source voltage of 60V and continuous drain current up to 15A at 25°C. It also includes dynamic characteristics like input capacitance, output capacitance, and reverse transfer capacitance, along with switching delay times.
| Package Type | SOT-23, Molded Plastic |
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The device comes in a SOT-23 molded plastic case.
The maximum total power dissipation is 200 mW.
The maximum drain-source voltage rating is 60 V.