This is a high-density power MOSFET with ultra-low RDS(on) for higher efficiency. It has a miniature SO-8 surface mount package that saves board space, and IDSS is specified at elevated temperatures. In addition, the diode exhibits high-speed, soft recovery performance. This product can be used in battery-powered products, portable products, computers, printers, PCMCIA cards, cell phones, and cordless telephones, among other applications.
This document is a technical datasheet for the NTMS4404N Power MOSFET manufactured by ON Semiconductor. The device features a high-density design with ultra-low on-resistance and is housed in a miniature SO-8 surface mount package to save board space.
The datasheet provides maximum ratings, electrical characteristics, typical performance curves, thermal resistance data, and package dimensions. It details specifications such as drain-to-source voltage, continuous drain current, gate threshold voltage, and switching times under various test conditions.
| Power Dissipation (Steady State, Note 1) | 1.56 W |
|---|---|
| Package Type | SO-8 |
| Operating Junction Temperature Range | -55 to 150 °C |
It uses a miniature SO-8 surface mount package.
The component can operate with a junction and storage temperature ranging from -55 to 150°C.
The maximum drain-to-source voltage rating for this power MOSFET is 30 V.