NTGS3446 is a N-channel MOSFET produced by Semiconductor Components Industries, LLC. This device has ultra-low RDS(on), higher efficiency extending battery life, logic level gate drive, diode exhibits high speed, soft recovery, avalanche energy specified, IDSS specified at elevated temperature, Pb-free package is available. It is used in power management in portable and battery-powered products, such as computers, printers, PCMCIA cards, cellular and cordless phones, and notebook PCs.
This document is a technical datasheet for the NTGS3446 Power MOSFET, an N-channel device with a drain current of 5.1 A and a drain-to-source voltage rating of 20 V. It features ultra-low on-resistance (RDS(on)) and logic-level gate drive capabilities suitable for power management in portable products.
| Drain-to-Source Voltage (VDS) | 20 V |
|---|---|
| Operating Temperature Range (TJ) | -55 to 150°C |
The maximum drain-to-source voltage rating is 20 V.
The device operates and stores within a temperature range of −55 to 150 °C.