NTMD6N03R2 is a 6A power MOSFET product released by Semiconductor Components Industries, LLC in January 2005. The product features ultra-low on-resistance and is suitable for low-voltage, high-frequency switching circuits. Applications include Dc-Dc converters, computers, printers, mobile phones, etc.
This document is a technical datasheet for the NTMD6N03R2, a dual N-channel Power MOSFET manufactured by ON Semiconductor. The device is designed for use in low voltage, high speed switching applications such as DC-DC converters, computers, and printers. It features an ultra-low on-resistance of 0.024 Ohms (typical) at Vgs = 10V and is packaged in a miniature SO-8 surface mount package.
| Drain-to-Source Voltage (Vdss) | 30 Volts |
|---|---|
| Gate-to-Source Voltage (Vgs) | +20 Volts |
| Continuous Drain Current (Id) | 6.0 A |
| Single Pulse Drain Current | 30 Apk |
| Total Power Dissipation | 2.0 Watts |
| Operating and Storage Temperature Range | -55 to +150 °C |
| On-Resistance (Rds(on)) @ Vgs=10V | 0.024 Ohms |
| Package Type | SO-8 Dual |
The device is designed for use in low voltage, high speed switching applications including DC-DC converters, computers, printers, and disk drives.
The device can operate within a junction temperature range of -55 to +150 °C.
The typical on-resistance (Rds(on)) is 0.024 Ohms when Vgs is 10V.