This document describes the features and characteristics of the NTMS4107N power MOSFET, including ultra-low RDS(on), low gate resistance, and low QG. It is optimized for low side synchronous applications and has high speed switching capability. It is suitable for notebook computer Vcore applications, network applications, and DC-DC converters.
This document is a technical datasheet for the NTMS4107N Power MOSFET manufactured by ON Semiconductor. The device features an ultra-low on-resistance of 3.4mQ at 10V gate drive and is specifically optimized for low-side synchronous applications, including notebook computer Vcore circuits and network applications.
The datasheet provides comprehensive electrical characteristics, typical performance curves, thermal resistance ratings, and package dimensions for the SO-8 (CASE 751) package. It includes maximum ratings such as a drain-to-source voltage of 30V and continuous drain current up to 18A at 25°C.
Yes, the device is optimized for low-side synchronous applications.
The maximum power dissipation is 1.67 W at a temperature of 25°C.
The maximum drain-to-source voltage rating is 30 V.