The CMPTH10 is an NPN silicon RF transistor manufactured by Central Semiconductor using the planar epitaxial process, molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications.
The CMPTH10 is an NPN silicon RF transistor manufactured by the epitaxial planar process and epoxy molded in a SOT-23 surface mount package. It is designed for low noise UHF/VHF amplifier and high output oscillator applications.
| Collector-Base Voltage | 30 V |
|---|---|
| Collector-Emitter Voltage | 25 V |
| Emitter-Base Voltage | 3.0 V |
| Power Dissipation | 350 mW |
| Operating and Storage Junction Temperature | -65 to +150 °C |
| Thermal Resistance | 357 °C/W |
| Cut-off Frequency | 650 MHz |
It is designed for low noise UHF/VHF amplifier and high output oscillator applications.
The maximum power dissipation is 350 mw.
The junction temperature ranges from -65 to +150 °C.