The CMPT3646 is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, ultra high speed switching applications.
The document describes the Central Semiconductor CMPT3646, an NPN Silicon Transistor manufactured using the epitaxial planar process. It is epoxy molded in a surface mount SOT-23 case and designed for high current, ultra-high speed switching applications.
The datasheet provides maximum ratings such as a collector-base voltage of 40 V and a power dissipation of 350 mW. It also lists detailed electrical characteristics including saturation voltages (VCE(SAT) and VBE(SAT)) under various test conditions, input capacitance values, and switching times like turn-on time (ton) and storage time (ts).
| Collector-Base Voltage (VcBo) | 40 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 15 V |
| Emitter-Base Voltage (VEBO) | 5.0 V |
| Collector Current (Io) | 200 mA |
| Power Dissipation (Pp) | 350 mW |
| Operating and Storage Temperature Range | -65 to +150 °C |
The marking code for the CMPT3646 type is C2R.
Yes, it is designed for ultra-high speed switching applications.