This document describes the maximum ratings and electrical characteristics of the CMPT3904 and CMPT3906 complementary silicon transistors. These transistors are surface mount packaged and designed for small signal general purpose amplifier and switching applications.
This document provides technical specifications for the Central Semiconductor CMPT3904 (NPN) and CMPT3906 (PNP) complementary silicon transistors. These devices are manufactured using an epitaxial planar process and housed in a surface-mount SOT-23 epoxy package.
| Package Type | SOT-23 Case |
|---|---|
| Continuous Collector Current (Ic) | 200 mA |
| Power Dissipation (Pd) | 350 mW |
| Operating and Storage Junction Temperature Range | -65 to +150 °C |
| Collector-Base Voltage (Vcbo) | 60 V (CMPT3904), 40 V (CMPT3906) |
| Collector-Emitter Voltage (Vceo) | 40 V |
| Emitter-Base Voltage (Vebo) | 6.0 V (CMPT3904), 5.0 V (CMPT3906) |
| Transition Frequency (fT) | 300 MHz (CMPT3904), 250 MHz (CMPT3906) |
The marking code for CMPT3904 is C1A.
The marking code for CMPT3906 is C2A.
Lead 1 is Base, Lead 2 is Emitter, and Lead 3 is Collector.