This document describes the PUMD9 NPN/PNP resistor-equipped transistors, which have built-in bias resistors and different polarities. It simplifies circuit design and reduces the number of components and board space. It is especially suitable for space reduction in portable equipment and inverter circuit configurations without the use of external resistors.
The document describes the Philips PUMD9, a discrete semiconductor component featuring both NPN and PNP transistors with built-in bias resistors (R1 and R2). These components are designed to simplify circuit design by reducing the number of external components required for inverter configurations. They are packaged in an SC-88 (SOT363) plastic surface-mounted package.
| Collector-base voltage (open emitter) | - 50 V |
|---|---|
| Collector-emitter voltage (open base) | - 50 V |
| Emitter-base voltage (open collector) | - 10 V |
| Output current (DC) | - 100 mA |
| Peak collector current | - 100 mA |
| Total power dissipation (Tamb < 25 °C) | - 200 mW |
| Total power dissipation (Tamb > 25 °C) | - 300 mW |
| Storage temperature | -65 +150 °C |
| Junction temperature | - 150 °C |
| Input resistor (Ri) | 7 10 13 kQ |
The device comes in an SC-88 (SOT363) plastic surface mounted package.
The transistors include different polarity and built-in bias resistors R1 and R2 with typical values of 10 kΩ and 47 kΩ respectively.
The maximum operating ambient temperature is +150 °C.