This document describes the features and characteristics of the PUMD48 NPN/PNP resistor-equipped transistors, including built-in bias resistors, two transistors with no mutual interference, simplified circuit design, and reduced number of components and board space.
The Philips PUMD48 is a discrete semiconductor component consisting of NPN and PNP transistors with built-in bias resistors (R1 and R2). This datasheet details the features, applications, and electrical characteristics of the device, noting that it simplifies circuit design by reducing the number of external components required for inverter configurations. The device is housed in an SC-88 plastic package (SOT363). This manual is written in Chinese.
| Package Type | SC-88 plastic package |
|---|---|
| Collector-Base Voltage (VCBO) | -50 V |
| Collector-Emitter Voltage (VCEO) | -50 V |
| Output Current (DC) | -100 mA |
| Total Power Dissipation (Per Transistor) | -200 mW |
| Storage Temperature | -65 to +150 °C |
| R1 Input Resistor (Typical) | 47 kΩ |
| R2 Input Resistor (Typical) | 2.2 kΩ |
The maximum total power dissipation is 300 mW per device when the ambient temperature is 25°C.
The maximum operating ambient temperature is 150°C.
The typical value of the input resistor R1 for the PNP transistor TR2 is 2.2 k Ω.