This document describes the features and characteristics of the PUMD16 NPN/PNP resistor-equipped transistors, including built-in bias resistors, simplified circuit design, reduction of component count, and reduced costs. It is suitable for low current peripheral driver, replacement of general purpose transistors in digital applications, and control of IC inputs.
This datasheet describes the Philips PUMD16, an NPN/PNP resistor-equipped transistor designed to simplify circuit design and reduce component count. The device integrates two transistors with internal bias resistors (R1 = 22 kΩ, R2 = 47 kΩ) within a single SOT363 plastic surface-mounted package.
Key features include reduced pick-and-place costs and suitability for low-current peripheral driver applications or as replacements for general-purpose transistors in digital circuits. The document provides detailed electrical characteristics, limiting values, thermal data, and mechanical dimensions.
| Collector-Emitter Voltage (VCEO) | -50 V |
|---|---|
| Output Current (DC) (IO) | -100 mA |
| Total Power Dissipation (Per Transistor) | 200 mW |
| Storage Temperature (Tstg) | -65 to +150 °C |
| Bias Resistor R2 | 47 kΩ |
The device includes R1 = 22 kΩ and R2 = 47 kΩ.
The maximum DC output current (IO) is -100 mA.