This datasheet introduces PEMD13; PUMD13 NPN/PNP resistor-equipped transistors. These transistors have built-in bias resistors, which simplify circuit design, reduce component count and reduce pick-and-place costs. The transistors are suitable for low-current peripheral drivers, replacement of general-purpose transistors in digital applications, and control of IC inputs.
The document is a product specification sheet for the Philips PEMD13 and PUMD13 series of discrete semiconductors. These are NPN/PNP resistor-equipped transistors featuring built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ) designed to simplify circuit design by reducing component count.
| Output Current (DC) (Io) | - 100 mA |
|---|---|
| Bias Resistor R1 | 4.7 kΩ |
| Bias Resistor R2 | 47 kΩ |
The device includes two built-in bias resistors with values of 4.7 kΩ and 47 kΩ.
The maximum total power dissipation for the SOT666 package is 300 mW.