Zetex ZXM61N03F N-Channel MOSFET Datasheet

ZXM61N03F is a low voltage N-channel enhancement mode MOSFET from Zetex, featuring low on-resistance and fast switching speed, ideal for high efficiency, low voltage, power management applications.


Zetex ZXM61N03F N-Channel MOSFET Datasheet - cover page
Brand
Zetex
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
218 KB
Published
02 July, 2012
Updated
30 September, 2023
MD5 checksum
1FAFB5FADEEEE803E5F8884D6B346051

About this manual

This document is a provisional datasheet issued by Zetex plc in May 1999 for the ZXM61N03F device. It describes a high-density N-channel enhancement mode MOSFET designed for low on-resistance and fast switching speeds, making it suitable for power management applications such as DC-DC converters and motor control.

What's inside

  • Summary
  • Features
  • Applications
  • Ordering Information
  • Absolute Maximum Ratings
  • Thermal Resistance
  • Electrical Characteristics
  • Typical Characteristics
  • Package Dimensions

Specifications

Drain-Source Voltage30 V
Power Dissipation (Ta=25°C)625 mW
Operating Temperature Range-55 to +150 °C
Static Drain-Source On-State Resistance0.22 Ω

Frequently asked questions

What is the maximum continuous drain current for this MOSFET?

The device supports a continuous drain current of 1.4 A when the gate-source voltage is 10 V and the temperature is 25°C.

What is the maximum power dissipation at room temperature?

The MOSFET can dissipate up to 625 mW when operating in still air on a specific PCB layout.

What is the maximum drain-source voltage rating?

The absolute maximum limit for the drain-source voltage is 30 V.

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