SEMH2 is a NPN Silicon Digital Transistor Array, used for switching circuits, inverters, interface circuits, driver circuits. The transistor has two (galvanic) internal isolated transistors with good matching, and a built-in bias resistor (R1=47kΩ, R2=47kΩ) in one package.
This document provides preliminary data for the Infineon SEMH2, an NPN Silicon Digital Transistor Array designed for use in switching circuits, inverters, interface circuits, and driver circuits. The device features two galvanically isolated transistors with good matching within a single SOT666 package and includes built-in bias resistors (Ry = 47kΩ, Ro = 47kΩ).
| Collector-emitter voltage | 50 V |
|---|---|
| Collector-base voltage | 50 V |
| Emitter-base voltage | 10 V |
| Input on Voltage | 50 V |
| DC collector current | 70 mA |
| Total power dissipation | 250 mW |
| Junction temperature | 150 °C |
| Storage temperature | -65 ... 150 °C |
| Transition frequency | 100 MHz |
| Collector-base capacitance | 3 pF |
The maximum total power dissipation is 250 mW when the temperature is 75 °C.
The maximum DC collector current is 70 mA.
The maximum junction temperature is 150 °C.