2N7371 is a PNP Darlington high power silicon transistor with a maximum rating voltage of 100V and a maximum collector current of 12A. The operating temperature range is -65 to +175 degrees.
This document provides technical specifications and electrical characteristics for the Microsemi 2N7371, a PNP Darlington high power silicon transistor. The device is qualified per military specification MIL-PRF-19500/623 at levels JAN, JANTX, and JANTXV.
The datasheet details maximum ratings including collector-emitter voltage of 100 Vdc and total power dissipation of 100 W. It also lists electrical characteristics such as cutoff currents, saturation voltages, switching times, and safe operating area test conditions.
| Collector-Emitter Voltage (Vceo) | 100 Vdc |
|---|---|
| Collector Current (Ic) | 12 Ade |
| Total Power Dissipation (Pr) | 100 Ww |
| Operating Junction Temperature Range | -65 to +175 °c |
| Thermal Resistance (Rac) | 15 °crw |
The device is qualified at JAN, JANTX, and JANTXV levels.
The minimum collector-emitter breakdown voltage is 100 Vdc when Ic = 100 mAdec.