Key facts
- Brand
- Microsemi
- Model
- 2N3498
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-12
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Microsemi 2N3498 NPN Silicon Transistor Data Sheet
Datasheet 2 pages · 54 KB · EN
This document provides technical specifications for the Microsemi 2N3498 series of NPN silicon transistors. The devices are qualified per MIL-PRF-19500/366 standards and are available in TO-5 and TO-39 packages.
Read onlineMicrosemi 2N3498 specifications
| Collector-Emitter Voltage (Vceo) | 100 Vdc for 2N3498, 150 Vdc for 2N3500 |
|---|---|
| Collector Current (Ic) | 500 mA for 2N3498, 300 mA for 2N3500 |
| Total Power Dissipation @Tc = 25°C | 1.0 W for 2N3498, 5.0 W for 2N3500 |
| Operating Junction Temp. Range (Ty) | -55 to +200 °C |
All Microsemi 2N3498 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What military qualification standard is this transistor qualified per?
The devices are qualified per MIL-PRF-19500/ 366.
What is the maximum collector-emitter breakdown voltage for the 2N3498?
The maximum collector-emitter breakdown voltage (Viceo) for the 2N3498 is 100 Vdc.
What is the maximum total power dissipation for the 2N3498 at 25°C?
The maximum total power dissipation is 1.0 W when the temperature is 25°C.
What is the operating and storage junction temperature range?
The operating and storage junction temperature range is from -55 to +200 °C.