2N7372 is PNP type, 2N7373 is NPN type, 2N7372 and 2N7373 are complementary power transistors, using isolated TO-254AA package, with high reliability, high frequency, fast switching and other characteristics
This document provides technical specifications for the Microsemi 2N7372 (PNP) and 2N7373 (NPN) power transistors. These devices are produced using a multiple diffused planar process to ensure high voltage capabilities, excellent switching speeds, and frequency response suitable for general-purpose amplifiers and inverter applications.
| Collector-Base Voltage (VcBo) | 100 V |
|---|---|
| Collector-Emitter Voltage (VcEO) | 80 V |
| Emitter-Base Voltage (VEBO) | +5.5 V / 5.5 V |
| Continuous Collector Current (Ic) | 5 A |
| Peak Collector Current | 10 A |
| Operating Junction Temperature (Tj) | -65 to 200 °C |
| Unclamped Inductive Load Energy | 15 mJ |
The devices utilize a JEDEC TO-254AA hermetic metal package.
Yes, all terminals are isolated from the case in this low profile package.