RHRU5070, RHRU5080, RHRU5090 and RHRU50100 (TA49066) are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion- implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
This document provides technical specifications and performance data for the Intersil RHRU5070, RHRUS5080, RHRUSO90, and RHRU50100 series of hyperfast diodes. These devices feature soft recovery characteristics with a reverse recovery time (tan) less than 75ns.
All listed models in this data sheet are available in a TO-218 JEDEC style package.
It takes a typical time of 32 ns to reach peak reverse current when the forward current is 50 A.