The document describes the features and characteristics of the NDT014 N-Channel Enhancement Mode Field Effect Transistor in September 1996, including maximum voltage, maximum current, maximum power dissipation, operating temperature range, etc.
This document is a technical datasheet for the Fairchild Semiconductor NDT014, an N-Channel Enhancement Mode Field Effect Transistor. The device utilizes proprietary high cell density DMOS technology to minimize on-state resistance and provide superior switching performance.
The NDT014 is specifically suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are required. It features a 2.7A continuous drain current capability and is available in the widely used SOT-223 surface mount package.
| Drain-Source Voltage (Voss) | 60 V |
|---|---|
| Gate-Source Voltage (Vgs) | +20 V |
| Operating Temperature Range | -65 to 150 °C |
| Package Type | SOT-223 |
Yes, these devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion.
The maximum continuous drain current is 2.7 A.
The maximum power dissipation is 3 W.