H11GX series are photodarlington-type optically coupled optocouplers with high output voltage and high output current. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
The document describes the H11G1, H11G2, and H11G3 series as photodarlington-type optically coupled optocouplers. These devices feature a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor that includes an integral base-emitter resistor to optimize elevated temperature characteristics. Key features include high collector-emitter breakdown voltage (minimum 100V for H11G1, 80V for H11G2, and 55V for H11G3), high sensitivity to low input current, and low leakage current at elevated temperatures.
| Collector-Emitter Voltage (H11G1) | 100 V |
|---|---|
| Collector-Emitter Voltage (H11G2) | 80 V |
| Collector-Emitter Voltage (H11G3) | 55 V |
| Input-Output Isolation Voltage | 5300 Vac(rms) |
| Forward Input Current | 60 mA |
| Operating Temperature | -55 to +100 °C |
| Total Device Power Dissipation | 260 mw |
The minimum CTR is 500 percent at an input current of 1 mA.
The maximum leakage current is 100 nA at 80°C.