BC 807 BC 808 are bipolar transistors, PNP type, with high current gain, low collector-emitter saturation voltage and high collector current, suitable for general AF applications.
This document provides technical specifications for the Siemens BC 807 and BC 808 series of PNP silicon AF transistors. These components are designed for general AF applications, featuring high collector current and current gain capabilities. The datasheet includes ordering codes and pin configurations for various gain variants.
| Collector-emitter voltage (Vceo) | 45 V (BC 807), 25 V (BC 808) |
|---|---|
| Collector current (Ic) | 500 mA |
| Peak collector current (Icm) | 1 A |
| Total power dissipation (Prot) | 330 mW |
| Junction temperature (Tj) | 150 °C |
The complementary types are BC 817 and BC 818 (NPN).
The storage temperature range is -65 to +150 °C.