This document is a datasheet for the Samsung KM684000LI/LI-L, a 4,194,304-bit high-speed CMOS Static Random Access Memory (SRAM) organized as 524,288 words by 8 bits. The device is fabricated using Samsung's advanced CMOS process and is designed for high-speed and low-power applications, particularly suitable for battery back-up nonvolatile memory applications.
| Total Capacity | 4,194,304 bits |
|---|---|
| Access Time (Max) | 100 ns |
| Standby Power (Typ) | 11 mW |
| Operating Temperature | -40°C to 85°C |
| Supply Voltage | 5V +10% |
| Input Capacitance | 8 pF |
The maximum access time is 100 ns.
The minimum data retention voltage is 2V.