This document is a DDR SDRAM 4GB Registered DIMM specification, which mainly introduces the product's features and characteristics, including product composition, working frequency, density, organization structure, component composition, height, speed, etc.
This document is a technical datasheet for the Samsung M312L5128MT0, a 4GB DDR SDRAM Registered DIMM module. The device is based on 1Gb M-die technology and features an 184-pin configuration with a height of 1,200 mils.
| Capacity | 4GB |
|---|---|
| Organization | 512M x 72 |
| Height | 1,200mil |
| Power Supply Voltage | 2.5V ± 0.2V |
| Refresh Interval | 7.8us |
The specific part number listed in the ordering information is M312L5128MT0-CA2/B0/A0.
Yes, the module supports 72-bit ECC.
The maximum storage temperature is +150 °C.