K4M56323LE is a synchronous high data rate Dynamic RAM fabricated with SAMSUNG's high performance CMOS technology. It has various features and functions, including LVCMOS compatibility, four banks operation, MRS cycle, and EMRS cycle.
This document provides technical specifications for the Samsung K4M56323LE, a synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits. The device is fabricated using Samsung's high performance CMOS technology and features an LVCMOS interface compatible with multiplexed addresses.
| Organization | 4 x 2,097,152 words by 32 bits |
|---|---|
| Package Type | 90 FBGA |
| Ball Pitch | 0.8mm |
| Supply Voltage | 2.5V |
| Refresh Period | 64ms |
| Operating Temperature (Extended) | -25°C ~ 85°C |
Commercial operation supports -25°C to 70°C, while extended operation supports -25°C to 85°C.
The absolute maximum power dissipation is rated at 1.0 W.