samsung DDR SDRAM 512Mb C-die (x4 x8 x16) handbook

This is a technical specification document for 512Mb C-die DDR SDRAM 66 TSOP-II with Pb-Free (RoHS compliant)

Brand: Samsung
Category: Memory
Document type: Datasheet
Language: English
Pages: 24
File format: PDF
File size: 360 KB
Published: 12 June, 2012
Updated: 30 September, 2023
Models: X16, 512MB
MD5 checksum: F3A1294F009EF5A8928438170571F768
PDF: samsung DDR SDRAM 512Mb C-die (x4 x8 x16) handbook PDF

About this manual

This document is a technical datasheet for the Samsung K4H510438C DDR SDRAM, available in x4, x8, and x16 organizations. The device utilizes a 66-pin TSOP-II package and is RoHS compliant. It supports operating frequencies up to 400MHz (DDR400) with a voltage of 2.5V or 2.6V depending on the specific speed grade.

What's inside

Key Features
Ordering Information
Operating Frequencies
Pin Description
Package Physical Dimension
Block Diagram
Input/Output Function Description
Command Truth Table
General Description
Absolute Maximum Rating

Specifications

Capacity	512Mb
Voltage (VDD)	2.5V or 2.6V
Compliance	RoHS compliant
Architecture	Double-data-rate
Banks	Four banks

Frequently asked questions

What is the maximum operating frequency for DDR400?

The maximum speed for DDR400 is 400MHz at CL3.

Is this component RoHS compliant?

Yes, the component is RoHS compliant.

What is the refresh interval?

The refresh interval is 7.8us.

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