The K4M511533E - Y(P)C/L/F is a synchronous high data rate dynamic random access memory released by Samsung. Its capacity is 536,870,912 bits, organized as 4 x 8,388,608 words x 16 bits, and manufactured with Samsung's high performance CMOS technology. The device adopts a synchronous design, which allows precise cycle control by using the system clock, and I/O transactions are possible on every clock cycle. The device supports a variety of operating frequencies, programmable burst lengths and programmable latencies, making it suitable for a variety of high bandwidth and high performance memory system applications.
The document describes the K4M511533E, a synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits. It is fabricated with Samsung's high performance CMOS technology and supports operating frequencies up to 133MHz (CL=3) or 105MHz (CL=2). The device features a multiplexed address interface compatible with LVCMOS logic levels.
| Organization | 8M x 16Bit x 4 Banks |
|---|---|
| Package Type | 54 FBGA |
| Supply Voltage | 3.0V or 3.3V |
| Max Frequency (CL=3) | 133MHz |
| Max Frequency (CL=2) | 105MHz |
| Operating Temperature (Commercial) | -25°C ~ 70°C |
The device supports CAS latencies of 1, 2, and 3.
Yes, it is available in both Leaded and Lead Free versions.
The device supports a 64ms refresh period with an 8K cycle.