This document provides a comprehensive technical overview of the Samsung SSH22N40/35 series N-channel Power MOSFETs. Key features include lower on-resistance, improved inductive ruggedness, fast switching times, and an extended safe operating area.
The datasheet details absolute maximum ratings such as drain-source voltage (400V for SSH22N40, 350V for SSH22N35) and continuous drain current. It also includes electrical characteristics like gate threshold voltage, input/output capacitance, switching times, and thermal resistance values for junction-to-case and junction-to-ambient.
| Part Numbers | SSH22N40, SSH22N35 |
|---|---|
| Drain-Source Voltage (Vss) | 400 V (SSH22N40), 350 V (SSH22N35) |
| Continuous Drain Current @ Tc=25°C | 22 A |
| Total Power Dissipation @ To=25°C | 230 Watts |
| Junction Temperature Range | -85 to +450°C |
| Static Drain-Source On-Resistance (Rds(on)) | Max. 0.25 Ohms |
| Input Capacitance (Ciss) | Max. 4287 pF |
The maximum drain-source voltage (Vss) for the SSH22N40 is 400 V.
The continuous drain current (ID) at Tc=25°C is 22 A.
The total power dissipation at To=25°C is 230 Watts.