KM416V4004C,KM416V4104C CMOS DRAM is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. This family offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
This document describes the KM416V4004C and KM416V4104C families of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. These devices offer high-speed random access of memory cells within the same row and are fabricated using Samsung's advanced CMOS process to achieve high bandwidth, low power consumption, and high reliability. The family supports optional features such as different refresh cycles (4K or 8K), access times (-45, -5, or -6), and power consumption modes (Normal or Low power).
| Memory Capacity | 4,194,304 x 16 bit |
|---|---|
| Refresh Cycle (KM416V4004C) | 8K |
| Refresh Cycle (KM416V4104C) | 4K |
| Access Time (-45) | 45ns |
| Access Time (-5) | 50ns |
| Access Time (-6) | 60ns |
| Input Leakage Current | 5 uA |
The memory capacity is 4,194,304 x 16 bit.
No, Self-refresh capability is available only in the L-version of the KM416V4004C.
The refresh time is 64ms for Normal mode and 128ms for L-version.