The HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The device utilizes a submicron CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins both internally and for the system user. Multiplexed address inputs permit the HYB3117805BSJ to be packaged in a standard SOJ 28 plastic package with 400 mil width. These packages provide high system bit densities and are compatible with commonly used automatic test and in-line test equipment.
The Siemens HYB3117805BSJ is a 16 MBit dynamic RAM organized as 2,097,152 words by 8-bits. It utilizes submicron CMOS silicon gate process technology and is available in a standard P-SOJ-28-3 plastic package with a 400 mil width. The device supports a single +3.3 V power supply and offers low power dissipation, with active power ranging from 360 mW to 432 mW depending on the speed grade.
| Organization | 2M x 8-bit |
|---|---|
| Capacity | 16 MBit |
| Supply Voltage | +3.3 V (+0.3 V) |
| Package Type | P-SOJ-28-3 |
| Refresh Cycles | 2048 / 32 ms |
| Active Power (-50 version) | 432 mW |
| Active Power (-70 version) | 360 mW |
| Standby Power (LV-TTL) | 7.2 mW |
The RAS access time for the -50 version is 50 ns.
The CAS access time for the -60 version is 15 ns.
The Hyper Page Mode (EDO) cycle time for the -70 version is 30 ns.