This document describes the features and characteristics of the PNZ263L Darlington phototransistor, including delay time, rise time, fall time, etc.
This document provides technical specifications for the PNZ263L Darlington Phototransistor, a component designed for optical control systems. Key features include high sensitivity to infrared emitters, a small size with a thin side-view type package, and the adoption of visible light cutoff resin.
The datasheet lists absolute maximum ratings such as a collector-to-emitter voltage of 20V and an operating ambient temperature range from -25°C to +80°C. It also details electro-optical characteristics including peak sensitivity at 850nm, response times (rise and fall), and spectral sensitivity curves.
| Collector to emitter voltage (VCEO) | 20 V |
|---|---|
| Operating ambient temperature (Topr) | -25 to +80 °C |
| Peak sensitivity wavelength (λP) | 850 nm |
| Acceptance half angle (θ) | 25 deg. |
| Response time (tr, tf) | 150 µs |
The peak sensitivity wavelength is 850 nm.
Yes, it adopts visible light cutoff resin.