The document describes the features and characteristics of the MRF5S19150HR3 and MRF5S19150HSR3 RF power field effect transistors. These transistors are designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz, and are suitable for TDMA, CDMA, and multicarrier amplifier applications. The document also provides performance parameters and features of these transistors under typical conditions.
This document provides technical data for the Freescale MRF5S19150HR3 and MRF5S19150HSR3, which are N-Channel Enhancement-Mode Lateral MOSFETs. These devices are specifically designed for PCN and PCS base station applications operating at frequencies from 1900 to 2000 MHz, suitable for TDMA, CDMA, and multicarrier amplifier applications.
| Drain-Source Voltage | -0.5, +65 Vdc |
|---|---|
| Gate - Source Voltage | -0.5, +15 Vdc |
| Total Device Dissipation | 427 W |
| Operating Junction Temperature | 200 °C |
| CW Operation Power | 100 W |
| Power Gain | 14 dB |
| Drain Efficiency | 26% |
| IM3 @ 2.5 MHz Offset | -36.5 dBc |
| ACPR @ 885 kHz Offset | -50 dB |
They are designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz.
They are suitable for TDMA, CDMA and multicarrier amplifier applications.
The typical performance is 32 Watts Avg. with a peak-to-average ratio of 9.8 dB.