MRF6S9125NR1, MRF6S9125NBR1, MRF6S9125MR1, MRF6S9125MBR1 are N-channel enhancement mode lateral MOSFETs designed by Freescale Semiconductor for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
This datasheet describes the MRF6S9125 series of RF Power Field Effect Transistors, which are N-Channel Enhancement-Mode Lateral MOSFETs. These devices are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz, making them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
| Drain - Source Voltage | -0.5, +68 Vde |
|---|---|
| Gate - Source Voltage | -0.5, +12 Vde |
| Total Device Dissipation @ Tg = 25°C | 398 Ww |
| Operating Junction Temperature | 200 °C |
| Power Gain (N-CDMA) | 20.2 dB |
| Drain Efficiency (GSM EDGE) | 40% (Typ) |
The typical output power is 27 Watts average.