2N3498 is a NPN silicon transistor with a maximum collector-emitter voltage of 100 volts, a maximum collector-base voltage of 100 volts, a maximum emitter-base voltage of 6 volts, a maximum collector current of 500 milliamps, and a maximum total power dissipation of 1 watt. It comes in TO-5 and TO-39 packages.
This document provides technical specifications for the Microsemi 2N3498 series of NPN silicon transistors. The devices are qualified per MIL-PRF-19500/366 standards and are available in TO-5 and TO-39 packages.
| Collector Current (Ic) | 500 mA (2N3498/2N3500), 300 mA (2N3499/2N3501) |
|---|---|
| Total Power Dissipation | 1.0 W @ Tj = 25°C |
| Operating Junction Temp Range | -55 to +200 °C |
The maximum total power dissipation is 1.0 W when the temperature is 25°C.
The operating and storage junction temperature range is from -55 to +200 °C.
The maximum collector-emitter breakdown voltage is 100 Vdc when the collector current is 10 mA.