ADVANCED POWER TECHNOLOGY APT10035B2FLL APT10035LFLL handbook

About this manual

This document provides technical specifications for the APT10035B2FLL and APT10035LFLL Power MOSFETs, which are part of the low loss, high voltage Power MOS 7™ family. These N-Channel enhancement mode devices feature exceptionally fast switching speeds due to a patented metal gate structure.

What's inside

• MAXIMUM RATINGS
• STATIC ELECTRICAL CHARACTERISTICS
• DYNAMIC CHARACTERISTICS
• SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
• THERMAL CHARACTERISTICS
• Package Outline

Frequently asked questions

What is the maximum continuous drain current for these MOSFETs at a junction temperature of 25°C?

The device supports a continuous drain current of 28 Amps when the junction temperature is maintained at 25°C.

What is the maximum total power dissipation rating for this MOSFET?

The part has a maximum total power dissipation of 690 Watts at a junction temperature of 25°C.

What is the typical turn-on delay time for this device under standard test conditions?

The typical turn-on delay time is 15 nanoseconds when the gate-source voltage is 15 Volts.