The document describes the features and characteristics of Semiconductor Group 1 BPX 80 BPX 82 . 89 NPN-Silicon Phototransistor Arrays. It is especially suitable for applications from 440 nm to 1070 nm, with high linearity and multiple-digit transparent epoxy array package.
This document is a technical datasheet for the Siemens BPX 80 series through BPX 89 silicon NPN phototransistor arrays. The devices are designed as multiple-digit array packages made of transparent epoxy, suitable for applications ranging from miniature light barriers to punched tape reading and industrial electronics control circuits.
| Operating and storage temperature range | -40...+80 °C |
|---|---|
| Collector-emitter voltage | 32 V |
| Collector current | 50 mA |
| Total power dissipation | 90 mW |
| Thermal resistance | 750 K/W |
| Wavelength of max. sensitivity | 850 nm |
| Spectral range of sensitivity | 440 ... 1070 nm |
They are suitable for miniature light barriers, punched tape reading, and industrial electronics control circuits.
The devices have a spectral sensitivity range from 440 nm to 1070 nm.
The components are marked with -A, -B, or -C based on their spectral sensitivity and photocurrent characteristics.