BFQ 76 is a PNP silicon RF transistor suitable for broadband amplifiers with a frequency range up to 2 GHz and a maximum collector current of 30 mA. It features low thermal resistance and high power gain.
The document is a technical data sheet for the Siemens BFQ 76, a PNP silicon RF transistor designed for broadband amplifiers operating up to 2 GHz. It specifies that the device is electrostatic discharge (ESD) sensitive and requires careful handling precautions.
Key specifications include a maximum collector-emitter voltage of 15 V, a total power dissipation of 250 mW at a case temperature of 116 °C or less, and a transition frequency ($f_T$) up to 5 GHz. The datasheet also lists complementary NPN type BFQ 71.
| Collector-emitter voltage (VCEO) | 15 V |
|---|---|
| Emitter-base voltage (VEBO) | 2 V |
| Collector current (IC) | 30 mA |
| Junction temperature (Tj) | 175 °C |
| Total power dissipation (Ptot) | 250 mW |
| Transition frequency (fT) | 5 GHz |
The maximum collector current (IC) is rated at 30 mA.
Yes, it is an electrostatic discharge sensitive device and handling precautions must be observed.