The document describes the Siemens HYB 514400BJ/BUJL, a Low Power 1M x 4-Bit Dynamic RAM organized as 1,048,576 words by 4-bit. It features a single +5V supply with a built-in substrate bias generator and supports various operation modes including fast page mode, read-modify-write, and multiple refresh techniques.
The datasheet provides absolute maximum ratings, DC and AC electrical characteristics for different speed grades (-50, -60, -70), pin definitions, block diagrams, test mode procedures, and package outlines for the P-SOJ-26/20-5 plastic package.
| Organization | 1,048,576 words x 4-bit |
|---|---|
| Operating Temperature Range | -50 to +70°C |
| Supply Voltage | +5V (+10%) |
| Package Type | P-SOJ-26/20-5 |
| Max Active Power Dissipation (-50 version) | 660 mW |
The device operates from -50 to +70°C.
Yes, it features a Low Power Version with reduced standby current of 1.4 mW max (CMOS).
The standard refresh period is 16 ms, while the Low Power version supports a 128 ms period.