The document introduces a semiconductor product, the model is SXT 2222 A. This product is an NPN silicon switching transistor with high current gain and low collector-emitter saturation voltage.
This document is a technical datasheet for the Siemens SXT 2222 A, an NPN Silicon Switching Transistor. It provides comprehensive specifications including maximum ratings such as collector-emitter voltage (40 V) and total power dissipation (1 W). The device features high current gain ranging from 0.1 mA to 500 mA and low collector-emitter saturation voltage.
| Collector-emitter voltage (Vceo) | 40 V |
|---|---|
| Collector-base voltage (Vcpo) | 75 V |
| Emitter-base voltage (Veso) | 6 V |
| Collector current (Ic) | 600 mA |
| Total power dissipation (Prot) | 1 W |
| Junction temperature (Ti) | 150 °C |
| Transition frequency (ft) | 300 MHz |
The device supports a maximum collector current of 600 mA.
The total power dissipation is limited to 1 W when the ambient temperature is 120°C.
The maximum allowable junction temperature is 150 °C.