NEC 2SJ208 P-Channel MOS FET Datasheet


NEC 2SJ208 P-Channel MOS FET Datasheet - cover page
Brand
NEC
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
252 KB
Published
07 June, 2012
Updated
07 June, 2012
MD5 checksum
AAF222FADEE64DF49E3E31CE3247E353

About this manual

The NEC 2SJ208 is a P-channel vertical type MOS Field Effect Transistor (MOS FET) specifically engineered as a switching device capable of being driven by a 2.5 V power supply. Due to its high input impedance and lack of requirement for driving current consideration, it is suitable for applications requiring power saving, such as in VCRs, cameras, and headphone stereos.

What's inside

  • Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Typical Characteristics
  • Recommended Soldering Conditions

Specifications

Operating Temperature Range-55 to +80 °C

Frequently asked questions

What is the minimum driving voltage for this MOS FET?

The device can be driven by a 2.5 V power supply.

Is a bias resistor required when using this component?

No, the number of parts can be reduced by omitting the bias resistor.

What is the maximum Gate Leakage Current?

The maximum Gate Leakage Current is 5.0 µA under specified conditions.

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