NEC 2SJ205 P-Channel MOS FET Datasheet


NEC 2SJ205 P-Channel MOS FET Datasheet - cover page
Brand
NEC
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
308 KB
Published
07 June, 2012
Updated
07 June, 2012
MD5 checksum
8DFC1C64324A5AD84F699B3CF0612320

About this manual

This document is a technical datasheet for the NEC 2SJ205, a P-channel vertical type MOS Field Effect Transistor (MOS FET). The device is specifically designed as a switching component that can be driven by a 3 V power supply. Due to its high input impedance and low on-state resistance, it eliminates the need for bias resistors and driving current considerations, making it suitable for power-saving applications in appliances such as VCRs, video cameras, and headphone stereos.

What's inside

  • ES Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Typical Characteristics
  • Switching Characteristics
  • Recommended Soldering Conditions

Specifications

Operating Temperature Range-55 to +80 °C

Frequently asked questions

What is the recommended power supply voltage for driving this device?

The 2SJ205 can be driven by a 3 V power supply.

Is a bias resistor required when using this MOS FET?

No, it is possible to omit the bias resistor due to its high input impedance.

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