This document is a technical datasheet for the NEC 2SJ331, a P-channel MOS Field Effect Power Transistor designed for industrial use as a driver for solenoids, motors, and lamps. It provides comprehensive specifications including absolute maximum ratings, electrical characteristics, and switching parameters.
| Drain to Source Voltage (Vbss) | -60 V |
|---|---|
| Gate to Source Voltage (Vessiac) | +20 V |
| Drain Current (DC) (Ipioey) | +30 A |
| Total Power Dissipation (Tc = 25 °C) | 150 W |
| Channel Temperature (Teh) | 150 °C |
| Drain to Source On-state Resistance (Rds(on)) Max | 26 mΩ |
The maximum on-state resistance is 26 mΩ when Vgs = -10 V and Id = -15 A.
The device is designed to drive solenoids, motors, and lamps.
The maximum total power dissipation is 150 W when the case temperature is 25 °C.