The NEC 2SJ197 is a P-channel vertical type MOS Field Effect Transistor (MOS FET) specifically designed for switching applications. It features low on-state resistance and excellent switching characteristics, making it suitable for driving actuators such as motors, relays, and solenoids directly from ICs with a 5V power supply.
| Gate to Source Voltage (Vgss) | -20 V MAX. |
|---|---|
| Drain Current (Continuous) (ID) | -1.5 A |
| Total Power Dissipation (Pd) | 2.0 W |
| Channel Temperature (Tch) | 150 °C |
| Drain to Source On-State Resistance (Rds(on)2) | 0.5 ~ 1.0 Ω |
| Input Capacitance (Ciss) | 220 pF |
The device can be driven directly by ICs having a 5 V power source.
No, the devices listed in this document are not suitable for use in aerospace equipment.