This document is a technical datasheet for the NEC 2SJ199, a P-channel vertical type MOS Field Effect Transistor (MOS FET). The device is specifically designed as a switching component capable of being driven directly by ICs powered by a 5 V source. It features low on-state resistance and is suitable for driving actuators such as motors, relays, and solenoids.
| Drain to Source Voltage (Vdss) | -100 V |
|---|---|
| Gate to Source Voltage (Vgss) | +20 V |
| Drain Current (continuous) | -1.0 A |
| Total Power Dissipation | 2.0 W |
| Channel Temperature (Tch) | 450 °C |
The maximum total power dissipation is 2.0 W when using a ceramic board of 16 cm² x 0.7 mm.
For infrared reflow, the package peak temperature must be 230 °C with a soldering time within 30 seconds above 210 °C.
No, the devices listed in this document are not suitable for use in nuclear reactor control systems.