This document provides technical specifications for the NEC 2SJ328 and 2SJ328-Z series of P-channel MOS field effect transistors. These devices are designed for industrial use as drivers for solenoids, motors, and lamps.
The datasheet details absolute maximum ratings such as a drain-to-source voltage of -60V and a total power dissipation of 75W. It also includes comprehensive electrical characteristics like on-state resistance, capacitance values, and switching times, along with graphical representations of the safe operating area and derating factors.
| Drain to Source Voltage (Max) | -60 V |
|---|---|
| Gate to Source Voltage (Max) | +20 V / -20 V |
| Drain Current (DC) | -20 A |
| Total Power Dissipation (Tc = 25 °C) | 75 W |
| Channel Temperature (Max) | 150 °C |
| Drain to Source On-state Resistance (Typ) | 48 mΩ |
The absolute maximum DC drain current rating is 20 A.