The document describes the NEC 2SJ330 as a P-channel MOS Field Effect Transistor designed specifically for industrial use in solenoid, motor, and amplifier driver applications. Key features include low on-state resistance (typical 40 mΩ at Vds = -10V) and built-in gate protection diodes.
| Drain to Source Voltage (Vdss) | -60 V |
|---|---|
| Gate to Source Voltage (Vgs) | +20, -10 V |
| Drain Current (DC) | -20 A |
| Total Power Dissipation (Tc = 25 °C) | 35 W |
| Channel Temperature Max | 150 °C |
| On-state Resistance (Typical) | 40 mΩ |
| Input Capacitance | 2570 pF |
The typical on-state resistance (Rds(on)) is 40 mΩ when Vds is -10V and Id is -10A.
The device is designed for solenoid, motor, and amplifier driver applications in industrial use.
Yes, it features built-in gate protection diodes to protect the device.