This document is a technical datasheet for the NEC 2SJ329, a P-channel MOS Field Effect Transistor designed for industrial use as a driver for solenoids, motors, and lamps. It provides comprehensive data on absolute maximum ratings, electrical characteristics, and switching parameters under standard test conditions (Ta = 25 °C).
| Drain to Source Voltage (Voss) | -60 V |
|---|---|
| Gate to Source Voltage (Vgss) | -20,+10 V |
| Drain Current (DC) | 15 A |
| Total Power Dissipation (Tc = 25 °C) | 35 W |
| Channel Temperature | 150 °C MAX. |
| On-state Resistance (Vgs = -10 V, Id = -8 A) | 47 mΩ TYP. |
| Input Capacitance | 2 150 pF TYP. |
It is designed for use as a driver for solenoids, motors, and lamps.
It belongs to the Standard quality grade.