This document provides technical specifications for the NEC 2SJ209, a P-channel vertical type MOS Field Effect Transistor designed for switching applications. It is suitable for driving actuators such as motors, relays, and solenoids due to its low on-state resistance and high input impedance.
| Drain to Source Voltage (Vdss) | -100 V |
|---|---|
| Gate to Source Voltage (Vgss) | -16 V |
| Drain Current (Id(DC)) | -100 mA |
| Total Power Dissipation (Pd) | 200 mW |
| Channel Temperature (Tch) | 150 °C |
For infrared reflow, the package peak temperature should be 230°C with a soldering time within 30 seconds above 210°C.
No, the devices listed in this document are not suitable for use where very high reliability is required, including aerospace equipment.