This document provides a technical overview of the NEC 2SJ210, a P-channel vertical type MOS Field Effect Transistor designed as a high-speed switching device. It is suitable for digital circuits where it can be driven directly by ICs with a 5 V power source due to its high input impedance.
The datasheet lists absolute maximum ratings such as a drain-to-source voltage of 60 V and a total power dissipation of 200 mW. It also includes detailed electrical characteristics like turn-on delay time, rise time, and capacitance values at 25 °C.
| Drain Current (Idpc) | 200 mA |
|---|
The device can be driven directly by the output of ICs having a 5 V power source.